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| Semiconductor Laser LNCQ03PS Red Light Semiconductor Laser For optical control systems 1.00.1 0.40.1 o5.6 +0 -0.025 o4.4 o3.550.1 Unit : mm 2 Reference slot High output operations with oscillatins wavelength of 660nm : 35mw Low threshold current Stable single horizontal mode osillation Space saved by miniaturization Low astigmatic difference facilitates good concentrated light spot, production. 1101 Features PD 3 Junction plane o1.0 min. Reference plane 1 LD 2.3 1.270.07 0.25 Reference plane 1.2 3-o0.45 6.5 Applications DVD-Ram Pointer o2.0 1 2 Bottom view 3 1: LD Anode 2: Common Case 3: PD Cathode Absolute Maximum Ratings (Ta = 25C) Parameter Radiant power Reverse voltage Power dissipation Operating ambient temperature Storage temperature Laser PIN Symbol PO VR VR (PIN) Pd (PIN) Topr Tstg Ratings 35 1.5 30 60 -10 to +60 - 40 to +85 Unit mW V V mW C C Electro-Optical Characteristics (Ta = 25C) Parameter Threshold current Operating current Operating voltage Symbol Ith IOP VOP RS L SE Horizontal direction Vertical direction Conditions CW CW PO = 30mW CW PO = 30mW CW PO = 30mW CW PO = 30mW CW PO = 30mW CW PO = 30mW CW PO = 30mW CW PO = 30mW CW PO = 4mW CW PO = 4mW min 20 50 2.0 3.0 635 0.5 7.5 17 -2.0 -3.0 typ 50 95 2.5 5.0 660 0.7 8.5 22 max 70 120 3.0 10 675 1.1 10.5 26.5 +2.0 +3.0 Unit mA mA V nm W/A deg. deg. deg. deg. m Resistance between electrodes Oscillation wavelength Slope efficiency Radiation angle Optical axis accuracy *1 *2 *3 // X Y As*2 X direction Y direction Astigmatic difference 5.0 10 // and are the angles where the optical intencity is a half of its max. value.( half full angle ) Reference to package axis. Guaranteed value in design. 1 Semiconductor Laser LNCQ03PS PO -- IOP 80 160 Ta = 25C I--V 100 Far field pattern Radiant power PO (mW) 60 120 Relative radiant power PO 75 40 I (mA) 80 50 20 Current 40 25 Fv Fh 0 0 50 100 150 200 0 0 1 2 3 4 0 60 40 20 0 20 40 60 Operating current IOP (mA) Voltage V (V) Angle (deg.) Ith -- Ta 10 2 10 3 IOP -- Ta 0.4 IP -- Ta IOP (mA) Ith (mA) IP (A) PIN photo current 0 20 40 60 80 10 2 10 0.3 Threshold current Operating current 10 0.2 0.1 1 0 20 40 60 80 0 -20 0 20 40 60 Ambient temperature Ta (C ) Ambient temperature Ta (C ) Ambient temperature Ta (C ) PO -- Ta 50 10 2 Id -- Ta VR (PIN) = 30V 40 10 Radiant power PO (mW) PIN dark current Id (nA) 10 30 50 70 30 1 20 10 -1 10 10 -2 0 - 10 10 -3 - 10 10 30 50 70 Ambient temperature Ta (C ) Ambient temperature Ta (C ) 2 |
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